男，博士，助理研究员，2024年毕业于北京航空航天大学，凝聚态物理专业。研究方向为低维材料拓扑物性的探索与调控。累计发表SCI论文12篇，一作/共一4篇，以主要参与人身份参与国家级科研项目3项以及企、事业创新课题5项。

2019.09-2024.06    北京航空航天大学        物理学院                 博士学位
2016.09-2019.01    北京航空航天大学        材料科学与工程学院       硕士学位
2011.09-2015.06    中国民航大学              理学院                  学士学位

2024.12-至今      北京航空航天大学     分析测试中心        助理研究员

材料物理性能表征测试，极端条件表征分析

累计发表学术论文12篇，一作/共一4篇。
1.M. Yang, W. Zhao, D. Mu, Z. Shi, J. Zhong, Y. Li, Y. Liu, J. Zhong, N. Cheng, W. Zhou, J. Wang, Y Shi, Y, Sun, W. Hao, L. Yang, J. Zhuang, Y. Du, Mass Acquisition of Dirac Fermions in Bi4I4 by Spontaneous Symmetry Breaking. Phys. Rev. Lett. 133, 246601 (2024).
2.J. Zhong, M. Yang, J. Wang, Y. Li, C. Liu, D. Mu, Y. Liu, N. Cheng, Z. Shi, L. Yang，J. Zhuang, Y. Du, Observation of Anomalous Planar Hall Effect Induced by One-Dimensional Weak Antilocalization. ACS Nano 18, 4343–4351 (2024).
3.W. Zhao, M. Yang, R. Xu, X. Du, Y. Li, K. Zhai, C. Peng, D. Pei, H. Gao, Y. Li, L. Xu, J. Han, Y. Huang, Z. Liu, Y. Yao, J. Zhuang, Y. Du, J. Zhou, Y. Chen, L. Yang, Topological Electronic Structure and Spin Texture of Quasi-One-Dimensional Higher-Order Topological Insulator Bi4Br4. Nat. Commun. 14, 8089 (2023).
4.J. Zhong, M. Yang, Z. Shi, Y. Li, D. Mu, Y. Liu, N. Cheng, W. Zhao, W. Hao, J. Wang, L. Yang, J. Zhuang, Y. Du, Towards layer-selective quantum spin hall channels in weak topological insulator Bi4Br2I2. Nat. Commun. 14, 4964 (2023).
5.D. Li, Z. Xu, M. Yang, J. Zhong, W. Hao, Y. Du, J. Zhuang, Bandgap Engineering and Photodetector Applications in Bi(I1-xBrx)3 Single Crystals. Appl. Phys. Lett. 123, 011102 (2023).
6.H. Zhang, Z. Shi, Z. Jiang, M. Yang, J. Zhang, Z. Meng, T. Hu, F. Liu, L. Cheng, Y. Xie, J. Zhuang, H. Feng, W. Hao, D. Shen, Y. Du, Topological Flat Bands in 2D Breathing-Kagome Lattice Nb3TeCl7. Adv. Mater., e2301790 (2023).
7.D. Mu, J. Li, Y. Liu, M. Yang, W. Zhou, C. Liu, J. Zhuang, Y. Du, X. Qi, J. Zhong, Role of Hollow Defects in Lattice Phase Separation and Electronic Features in Quasi-One-Dimensional Bi4I4 Crystals. J. Phys. Chem. C. 127, 2098–2103 (2023).
8.M. Yang, Y. Liu, W. Zhou, C. Liu, D. Mu, Y. Liu, J. Wang, W. Hao, J. Li, J. Zhong, Y. Du, J. Zhuang, Large-Gap Quantum Spin Hall State and Temperature-Induced Lifshitz Transition in Bi4Br4. ACS Nano. 16, 3036–3044 (2022).
9.J. Zhong, M. Yang, F. Ye, C. Liu, J. Wang, J. Wang, W. Hao, J. Zhuang, Y. Du, Facet-dependent Electronic Quantum Diffusion in the High-Order Topological Insulator Bi4Br4. Phys. Rev. Appl. 17, 064017 (2022).
10.Y. Xi, X. Jing, Z. Xu, N. Liu, Y. Liu, M.-L. Lin, M. Yang, Y. Sun, J. Zhuang, X. Xu, W. Hao, Y. Li, X. Li, X. Wei, P.-H. Tan, Q. Li, B. Liu, S. X. Dou, Y. Du. Superconductivity in Layered van der Waals Hydrogenated Germanene at High Pressure J. Am. Chem. Soc. 144 18887–18895 (2022).
11.J. Zhuang, J. Li, Y. Liu, D. Mu, M. Yang, Y. Liu, W. Zhou, W. Hao, J. Zhong, Y. Du, Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Atomically Sharp Topological Non-Trivial Edge States. ACS Nano. 15, 14850–14857 (2021).
12.D. Mu, W. Zhou, Y. Liu, J. Li, M. Yang, J. Zhuang, Y. Du, J. Zhong, Resolving the Intrinsic Bandgap and Edge Effect of BiI3 Film Epitaxially Grown on Graphene. Mater. Today Phys. 20, 100454 (2021).

2023年，北京航空航天大学博士优秀学术创新成果奖
2022年，北京航空航天大学博士生卓越学术基金
2019年，北京航空航天大学优秀硕士毕业生